首页 | 学院概况 | 学科建设 | 人才培养 | 招生信息 | 师资队伍 | 科学研究 | 教学研究 | 学生工作 | 党群工作 
 
当前位置: 首页>>师资队伍>>教工列表>>正文
 
林兆军
2016-06-14 15:20   审核人:

5E87

 

林兆军:男,1962年6月出生;教授,博士生导师;

教育经历:

1994/09-1997/07,中国科学院半导体所,博士

1985/09-1988/07,河北大学,电子系,硕士

1980/09-1984/07,河北大学,电子系,学士

工作经历:

2016/04-现在,山东大学,微电子学院,教授

2003/12-2016/04,山东大学,物理学院,教授

2002/03-2003/09,美国Ohio State University, 电子工程系,从事了AlGaN/GaN异质结构肖特基接触及场效应晶体管的研究工作。

2000/09-2002/03, 美国Northwestern University,量子器件研究中心,研究工作包括:GaInAs/AlInAs量子级联激光、GaN基蓝激光和发光管。

1999/10-2000/09,加拿大McMaster University,电子工程系,开展了InGaAsP-InP多量子阱激光器的研究工作。

1997/09月-1999/09,北京大学,微电子研究所,博士后,从事GaN电子器件的研究。

1988/07-1994/08,河北大学,电子系,讲师

 

本科生课程:半导体器件

硕士研究生课程:半导体器件理论

博士研究生课程:低维材料与器件

 

研究方向:GaN电子器件、低维材料与器件、半导体光电子器件。

 

1、国家自然科学基金项目:极化库仑场散射与GaN基异质结场效应晶体管源、漏寄生串联电阻关联关系研究,项目号:11574182,金额:86万元,研究期限:2016.01-2019.12.,项目负责人:林兆军

2、国家自然科学基金项目:AlGaN/GaN异质结场效应晶体管中与AlGaN势垒应变分布相关的载流子散射机制研究,项目号:11174182, 金额:68万元,研究期限:2012.01-2015.12. 项目负责人:林兆军

3、高等学校博士学科点专项科研基金(博导类)项目:AlGaN/GaN异质结场效应晶体管中应变极化梯度库仑场散射研究,项目号:20110131110005,金额:12 万元,研究期限:2012.01-2015.12,项目负责人:林兆军

4、国家自然科学基金项目:肖特基接触金属对AlGaN势垒层应变影响研究,项目号:10774090, 金额:30万元,研究期限:2008.01-2010.12. ,

项目负责人:林兆军


1.   Effect of Polarization Coulomb field scattering on parasitic  source access

resistance  and extrinsic transconductance in AlGaN/GaN heterostructure FETs.

Ming  Yang, Zhaojun Li*, Jingtao Zhao, Peng Cui, Chen Fu, Yuanjie Lv, and Zhihong  Feng,(*: 通讯作者),IEEE Transactions on  Electron Devices , Vol.63, 1471 (2016).

2.   Study of source access resistance at direct current quiescent  points for

AlGaN/GaN  heterostruceure field-effect transistors

Ming  Yang, Yuanjie Lv, Zhihong Feng, Wei Lin, Peng Cui, Yan Liu, Chen Fu,

Zhaojun  Lin*, Journal of Applied Physics, Vol.119, 224501 (2016).

3.A study of the impact of gate metals on the  performance of AlGaN/AlN/GaN heterostructure field-effect transistors

Jingtao Zhao, Zhaojun Lin*, Quanyou Chen, Ming Yang,  Peng Cui, Yuanjie Lv, and Zhihong Feng, Applied Physics Letters, Vol. 107, 113502 (2015).

4.Effects  of rapid thermal annealing on the electrical properties of the AlGaN/AlN/GaN  heterostructure field-effect transistors with Ti/Al/Ni/Au gate electrodes

Jingtao  Zhao, Zhaojun Lin*, Chongbiao  Luan, Yang Zhou, Ming Yang, Yuanjie Lv, and Zhihong FengApplied  Physics Letters, Vol.105, 083501(2014).

5.Theoretical  model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN  heterostructure field-effect  transistors

Chongbiao  Luan, Zhaojun Lin*, Yuanjie Lv,  Jingtao Zhao, Yutang Wang, Hong Chen, and Zhanguo Wang, Journal of Applied Physics, Vol.116, 044507(2014).

6.Influence  of the side-Ohmic contact processing on the polarization Coulomb field

scattering in  AlGaN/AlN/GaN heterostructure field-effect transistors

Chongbiao Luan,  Zhaojun Lin*, Yuanjie Lv, Lingguo Meng, Yingxiao Yu, Zhifang

Cao, Hong Chen,Zhanguo  Wang, Applied Physics Letters, Vol.101, 113501(2012)

7.Influence of the ratio of  gate length to drain-to-source distance on the electron

mobility in AlGaN/AlN/GaN heterostructure  field-effect transistors

Yuanjie Lv, Zhaojun Lin*, Lingguo  Meng, Chongbiao Luan, Zhifang Cao, Yingxiao

Yu, Zhihong Feng and Zhanguo Wang, Nanoscale  Research Letters,Vol.7, 434 (2012)

8. Polarization Coulomb  field scattering in In0.18Al0.82N/AlN/GaN  heterostructure field-effect transistors

Chongbiao Luan, Zhaojun Lin*, Zhihong Feng,  Lingguo Meng, Yuanjie Lv, Zhifang Cao, Yingxia Yu, Zhanguo Wang, Journal of  Applied Physics, Vol.112, 054513 (2012)

9. Evaluating  AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage  from forward Current-Voltage characteristics

Yuanjie  Lv, Zhaojun Lin,* Lingguo Meng, Yingxia Yu,Chongbiao Luan,Zhifang  Cao, Hong Chen, Baoquan Sun, and Zhanguo Wang, Applied Physics Letters,  Vol.99,

123504  (2011)

10. Polarization  Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect  transistors

Yuanjie Lv, Zhaojun Lin,* Yu Zhang, Lingguo Meng, Chongbiao  Luan, Zhifang Cao,1 Hong Chen, and Zhanguo Wang, Applied  Physics Letters, Vol.98, 123512 (2011)

11. Extraction  of AlGaN/GaN heterostructure Schottky diode barrier heights from forward  current-voltage characteristics

Yuanjie Lv, Zhaojun  Lin,* Timothy D. Corrigan, Jianzhi Zhao,Zhifang Cao, Lingguo Meng,  Chongbiao Luan,Zhanguo Wang, and Hong Chen, Journal of Applied Physics,  Vol.109, 074512 (2011)

12. The  influence of Schottky contact metals on the strain of AlGaN barrier layers

Zhaojun Lin*,  Jianzhi Zhao, Timothy Corrigan, Zhen Wang, Zhidong You, Zhanguo Wang, Wu lu,  Journal of Applied Physics, Vol.103, 044503 (2008)

13. Electron  mobility related to scattering caused by the strain variation of AlGaN

barrier layer in  strained AlGaN/GaN heterostructures

Jianzhi Zhao, Zhaojun Lin*, Timothy Corrigan, Zhen Wang,  Zhidong You, Zhanguo

Wang, Applied Physics letters, Vol.91, 173507(2007).

14. Influence of Ni Schottky contact area on  two-dimensional electron-gas sheet  

carrier concentration of strained AlGaN/GaN  heterostructures

Zhaojun Lin*,  Wu Lu, Journal of Applied Physics, Vol.99, 014504 (2006).

15. Thermal  stability of Schottky contacts on strained AlGaN/GaN heterostructures

Zhaojun Lin,  Wu Lu, Jaesun Lee, Dongmin Liu, Appl. Phys. Lett., Vol.84, 1585

(2004).

16. Barrier heights  of Schottky contacts on strained AlGaN/GaN heterostructures:

Determination and  effect of metal work functions

Zhaojun Lin, Wu lu, Jaesun Lee,  Dongmin Liu, Appl. Phys. Lett., Vol.82, 4364 (2003).授权发明专利:

专利名称:确定GaN异质结场效应晶体管栅下势垒层应变的方法

申请人:林兆军,赵景涛,栾崇彪,吕元杰,杨铭,周阳,杨淇皓

专利号:201310682762.X

 

现是中国电子学会半导体与集成技术分会委员,山东省电子学会电子元件与材料专业委员会主任委员。

 

通信地址:济南市山大南路27号山东大学光电所

邮政编码:250100

联系电话:0531-88363700

电子邮箱:linzj@sdu.edu.cn


关闭窗口