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肖洪地
2016-06-15 10:48   审核人:

肖洪地,工学博士,副教授

1990年9月考入山东大学,先后在应用化学专业、物理化学专业和材料物理与化学专业获得学士、硕士和博士学位。2010年-2011年在美国耶鲁大学做访问学者。主要从事半导体材料与器件等方面的研究工作。自2006年任现职以来,先后作为负责人承担国家项目一项,省部级项目四项,发表SCI论文50余篇。



III-V族半导体材料与器件

纳米半导体材料



本科生课程:《大学物理》,《医学物理概论》,《力学》等

研究生课程:《薄膜物理》


1. 具有纳米空腔的大面积柔性GaN基LED的制备及特性研究,国家自然科学基金,2014.1-2017.12

2. 南四湖和东平湖藻类的降解及降解机理的研究,南水北调办公室2013.1-2013.12

3.尺寸可控的柔性GaN基纳米薄膜的制备及特性研究,山东省科技攻关2012.1-2014.12

4.  Si(111)衬底有序GaN/Ga203径向纳米线异质结构的制备及性质研究,山东省中青年科学家奖励基金2008.1-2010.12

5. 有序GaN/Ga2O3径向纳米线异质结构的电子能态和声子能态结构的研究,国家博士后基金,2008.12-2010.8

6. 2008.12-2010.8 GaN/Ga2O3核壳纳米线垂直阵列的制备及相关性质的研究, 山东省博士后基金, 2008.12-2010.8




1.      D. Cao, H. Xiao*, et. al., Depth detection and fabrication of porous Silicon without the stress, Applied Surface Science 362 (2016) 557-561

2.      D. Cao, H. Xiao*, et. al., Electrochemical characteris of n-type GaN in oxalic acid solution under the prebreakdown condition, Journal of Alloys and Compounds 652 (2015) 200-204

3.      H. Xu, H. Pei, H. Xiao*, et. al., Degradation mechanism of hydrogen terminated porous silicon in the presence and in the absence of light, AIP Advances 5 (2015) 067125

4.      D. Cao, H. Xiao*, et. al., Enhancing the photocatalytic activity of GaN by elextrochemical etching, Materials Research Bulletin, 70 (2015) 881-886 

5.      H. Xiao*, J. Cui, et. al., Self-standing nanoporous GaN membranes fabricated by UVassisted electrochemical anodization,  Materials Letters 145 2015 304-307

6.      J.CuiH. Xiao*, et. al., Porosity-induced relaxation of strains at different depth of nanoporous GaN studied using the Z-scan of Raman spectroscopyJournal of alloys and compounds 626 2015 154-157 

7.      J.CuiH. Xiao*, et. al., Morphology and growth mechanism of gallium nitride nanotowers synthesized by metal-organic chemical vapor deposition Journal of alloys and compounds 563 (2013) 72-76

8.      H. Xiao*, J. Liu, et. al., Structure and growth mechanism of quasi-aligned GaN layer-built nanotowers, Applied Physics Letters 100 (2012) 213101

9.      H. Xiao*, H. Pei, et. al., Fabrication,characterization, and photocatalysis of GaN-Ga2O3 core-shell nanoparticles, Materials letters, 71 (2012) 145-147

10.  D. Chen, H. Xiao*, J. Han*, Nanoporoes in GaN by electrochemical anodization in hydrofluoric acid: Formation and mechanism, Journal of Applied Physics, 112 (2012) 064303



电子邮箱:hdxiao@sdu.edu.cn 

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