首页 | 学院概况 | 学科建设 | 人才培养 | 招生信息 | 师资队伍 | 科学研究 | 教学研究 | 学生工作 | 党群工作 
 
当前位置: 首页>>师资队伍>>教工列表>>正文
 
辛倩
2016-06-15 10:52   审核人:

辛倩,女,生于1982年1月2日,材料学博士,副研究员,教学科研岗。美国化学学会(ACS)会员。发表了包括Nature Communications, Physical Review Letters, Advanced Materials等多篇学术论文,参与撰写一部国际学术著作,拥有1项国内专利,主持了6项共80万余元的国家省部级科研项目。


教育背景:

09/1999-06/2003,山东大学 材料科学与工程学院,高分子材料科学与工程专业,学士;

09/2003-12/2008,山东大学 晶体材料国家重点实验室,材料学,博士, 师从:陶绪堂 长江学者特聘教授。


工作背景:

04/2009-07/2013,日本千叶大学 大学院融合科学研究科,表面与界面物理,Globle COE 博士后研究员;

09/2013-04/2016,山东大学 物理学院,纳电子研究中心,副研究员;

05/2016-今,山东大学 微电子学院,纳电子研究中心,副研究员。


大学物理


金属氧化物半导体材料与器件

基于金属氧化物半导体的柔性电子器件


关于掺杂实现有效p型金属氧化物半导体及其导电机理的探索,国家自然科学基金青年项目,25万,2014.01-2016.12,项目负责人;

基于SnO的p型氧化物半导体的开发与能带结构研究,山东省自然科学基金青年项目,6万,2013.10-2016.10,项目负责人;

高迁移率SnO基p型氧化物半导体的开发,山东大学自主创新基金,10万,2014.01-2015.12,项目负责人;


J. Zhang, Y. Li, B. Zhang, H. Wang, Q. Xin*, and A. Song*, Flexible indium-gallium-zinc-oxide Schottky diode operating beyond 2.45 GHz, Nature Communications,6, 7561 (2015).

Q. Xin, L. Yan, Y. Luo, and A. Song*, Study of breakdown voltage of indium-gallium-zinc-oxide-based Schottky diode, Applied Physics Letters, 106, 113506 (2015).

Q. Xin*, S. Duhm, F. Bussolotti, Y. Kubozono, H. Aoki, T. Kosugi, S. Kera, and N. Ueno*, Accessing surface Brillouin zone and band structure of picene single crystals, Physics Review Letters, 108, 226401(2012).

S. Duhm*, Q. Xin, S. Hosoumi, H. Fukagawa, K.Sato, N. Ueno, and S. Kera*, Charge Reorganization Energy and Small Polaron Binding Energy of Rubrene Thin Films by Ultraviolet Photoelectron Spectroscopy, Advanced Materials,24,901-905 (2012).

 Q. Xin*, S. Duhm, S. Hosoumi, N. Ueno, X.-T. Tao, and S. Kera, Impact of nitrogen substitution on the electronic structure and molecular arrangement of heteroacene films, The Journal of Physical Chemistry C, 115, 15502-15508 (2011).

S. Duhm*, Q. Xin, N. Koch, N. Ueno, and S.Kera*, Impact of alkyl side chains at self-assembly, electronic structure and charge arrangement in sexithiophene thin films, Organic Electronics,12,903-910 (2011).

C. Yuan, Q. Xin, L. Wang, M. Jiang, and X. Tao*, Lambda-shaped optoelectronic materials based on Tröger's base, Science China Chemistry, 54, 587-595 (2011).

S. Machida, Y. Nakayama*, S. Duhm, Q. Xin, A. Funakoshi, N. Ogawa, S. Kera, N. Ueno, and H. Ishii, Highest-Occupied-Molecular-Orbital band dispersion of rubrene single crystal as observed by angle-resolved ultraviolet photoelectron spectroscopy, Physics Review Letters,104,156401 (2010).

Q. Xin, X.-T. Tao, H.-J. Liu, Y. Ren, M.-H. Jiang, Synthesis, structure and packing properties of three Tro ̈ger’s base analogues containing substituted fluorene units, CrystEngComm, 10, 1204-1210 (2008).

Q. Xin, X.-T. Tao, J.-L. Sun, D.-C. Zou, F.-J. Wang, H.-J. Liu, Y. Ren, M.-H. Jiang, Fluorene-based Tröger’s base analogues: Potential electroluminescent materials/Organic Electronics, Organic Electronics, 9, 1076-1086 (2008).

Y. Ren, Q. Xin, X.-T. Tao, L. Wang, X.-Q. Yu, J.-X. Yang, M.-H. Jiang, Novel multi-branched organic compounds with enhanced two-photon absorption benefiting from the strong electronic coupling, Chemical Physics Letters, 414, 253-258 (2005).

Y. Nakayama, S. Duhm, Q. Xin, S Kera, H Ishii, and N. Ueno, Chapter 2: Ultraviolet photoelectron spectroscopy (UPS) I: Band dispersion measurement of “insulating” organic single crystals. Book: Electronic Processes in Organic Electronics, Springer Series in Materials Science, 209, pp. 11-26, (2015).

陶绪堂,辛倩,蒋民华,一种-型超格斯碱衍生物类有机电致发光材料,发明专利,专利号:200810013750. 授权日:2010.09.08.


20165月,获山东大学青年学者未来计划


通信地址:山大南路27号山东大学中心校区知新楼C座813

邮政编码:250100

联系电话:0531-88363606

电子邮箱:xinq@sdu.edu.cn



关闭窗口